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| FDD6778A N-Channel PowerTrench(R) MOSFET January 2009 FDD6778A N-Channel PowerTrench(R) MOSFET 25 V, 14.0 m Features Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D-PAK TO -252 (TO-252) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 25 20 10 30 12 50 12 24 3.7 -55 to +175 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.2 40 C/W Package Marking and Ordering Information Device Marking FDD6778A Device FDD6778A Package D-PAK (TO-252) Reel Size 13 '' Tape Width 12 mm Quantity 2500 units (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 1 www.fairchildsemi.com FDD6778A N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V 25 17 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 10.0 A VGS = 4.5 V, ID = 9.7 A VGS = 10 V, ID = 10.0 A, TJ = 150 C VDS = 5 V, ID = 10.0 A 1.0 1.9 -6 11.4 22.0 17.2 33 14 30.0 21.2 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 652 142 129 0.8 870 190 195 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 10.0 A VDD = 13 V, ID = 10.0 A, VGS = 10 V, RGEN = 6 6 3 14 2 12 7 2.0 2.8 12 10 26 10 17 10 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 10.0 A (Note 2) (Note 2) 0.9 0.8 14 3 1.3 1.2 26 10 V ns nC IF = 10.0 A, di/dt = 100 A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 40 C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: EAS of 12 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A. (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 2 www.fairchildsemi.com FDD6778A N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 50 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 4 VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 40 ID, DRAIN CURRENT (A) VGS = 6 V VGS = 4.5 V VGS = 4 V 30 20 3 2 1 VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 3.5 V 10 0 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 0 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 SOURCE ON-RESISTANCE (m) ID = 10 A VGS = 10 V 1.6 1.4 1.2 1.0 0.8 50 40 30 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 10 A rDS(on), DRAIN TO TJ = 150 oC 20 10 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 50 VGS = 0 V 40 ID, DRAIN CURRENT (A) VDS = 3.5 V 10 30 20 TJ = 175 oC 1 TJ = 175 oC TJ = 25 oC TJ = 25 oC TJ = -55 oC 10 0 0 TJ = -55 oC 1 2 3 4 5 6 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 3 www.fairchildsemi.com FDD6778A N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 10 A 2000 8 VDD = 10 V VDD = 13 V 1000 CAPACITANCE (pF) Ciss 6 VDD = 16 V 4 2 0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) Coss f = 1 MHz 100 VGS = 0 V 80 0.1 Crss 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 10 30 VGS = 10 V TJ = 150 oC TJ = 25 oC 20 VGS = 4.5 V TJ = 125 oC 10 Limited by Package RJC = 6.2 C/W o 1 0.0001 0.001 0.01 0.1 1 10 0 25 50 75 100 125 o 150 175 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 10 us ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 8000 P(PK), PEAK TRANSIENT POWER (W) 100 us VGS = 10 V 10 THIS AREA IS LIMITED BY rDS(on) 1000 SINGLE PULSE RJC = 6.2 oC/W TC = 25 oC 1 1 ms 10 ms 100 ms DC SINGLE PULSE TJ = MAX RATED RJC = 6.2 oC/W TC = 25 oC 100 0.1 0.1 1 10 70 10 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 4 www.fairchildsemi.com FDD6778A N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC 0.01 SINGLE PULSE RJC = 6.2 C/W o 0.001 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 96 C/W (Note 1b) o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 5 www.fairchildsemi.com FDD6778A N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM XSTM (R) The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 (c)2009 Fairchild Semiconductor Corporation FDD6778A Rev.C 6 www.fairchildsemi.com |
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